New Product
SUD19P06-60L
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
30
V GS = 10 thr u 5 V
30
25
20
15
10
4 V
25
20
15
10
T C = 125 °C
5
3 V
5
25 °C
- 55 °C
0
0
0
2
4
6
8
10
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
35
V DS - D r a i n - t o - S o u r c e V o l t a g e ( V )
Output Characteristics
0.12
V GS - Gate-to-So u rce V oltage ( V )
Transfer Characteristics
30
25
20
T C = - 55 °C
25 °C
125 °C
0.10
0.0 8
0.06
V GS = 4.5 V
V GS = 10 V
15
0.04
10
5
0
0.02
0.00
0
5
10
15
20
25
30
0
5
10
15
20
25
30
1800
V GS - Gate-to-Source Voltage (V)
Transconductance
20
I D - Drain C u rrent (A)
On-Resistance vs. Drain Current
1500
1200
C iss
16
V DS = 30 V
I D = 10 A
12
900
8
600
300
0
C rss
C oss
4
0
0
10
20
30
40
50
60
0
10
20
30
40
50
V DS - Drain-to-Source Voltage (V)
Capacitance
Document Number: 73103
S-71660-Rev. B, 06-Aug-07
Q g - Total Gate Charge (nC)
Gate Charge
www.vishay.com
3
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